Modeling of Tunnel Junction (GaAs) in the Cascade Solar Cell
نویسنده
چکیده
In this paper describes a simple model for tunnel junction (GaAs) between the top cell (GaAs) and bottom cell (Ge) of cascade solar cells. We theoretically studied the electrical characteristics (IV) of GaAs tunnel diode with the accounting program MATLAB for doping concentration of the junction after Using this model between two cascaded solar cell (GaAs / Ge) and we calculate the electrical characteristics and performance using AMPS-1D software. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
منابع مشابه
Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP
Multi-junction solar cells play a crucial role in the ConcentratedPhotovoltaic (CPV) Systems. Recent developments in CPV concerning high powerproduction and cost effective-ness along with better efficiency are due to theadvancements in multi-junction cells. This paper presents a simulation model of thegeneralized Multi-junction solar cell and introduces a two-bond solar ...
متن کاملDesign of ARC less InGaP/GaAs DJ solar cell with high efficiency
In this work, we used the Atlas Tcad Silvaco software to investigate the effect of adding an additional BSF layer on the performance of InGap / GaAs dual junction solar cells with a hetero tunnel Al0.7Ga0.3As-In0.49Ga0.51P junction. These analyzes indicate that, the addition of a BSF layer to the bottom cell the increase in the thickness of the BSF top cell would reduce the recombination and in...
متن کاملطراحی و شبیهسازی سلول خورشیدی سهپیوندی بر مبنای چاه کوانتومی
In this paper, the purpose is to improve the efficiency of triple-junction solar cell by introducing quantum well into GaAs junction. Firstly, InGaP/GaAs/InGaAs triple-junctions solar cell has been simulated. Then, a multiple stepped quantum wells (MSQWs), in which InGaAs well is sandwiched by InGaAsP as stepped layer, and the barrier is GaAs, has been introduced into intrinsic region of single...
متن کاملComparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell
Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silva...
متن کاملNumerical Simulation of CdS/CIGS Tandem Multi-Junction Solar Cells with AMPS-1D
Numerical modeling of polycrystalline thin-film solar cell serves as an imperative procedure to test the suitability of proposed physical clarification and to anticipate the effect of physical changes on cell performance. All in all, this must be conducted with only partial knowledge of input parameters. In this paper, we evaluated the numerical simulation of CdS/CIGS tandem multi junction sola...
متن کامل